Abstract
We demonstrate for the first time a 1.3-/spl mu/m wavelength optoelectronic InGaAsP-InP smart pixel switching circuit using monolithically integrated p-i-n photodiodes and heterojunction bipolar transistors, along with surface-mounted folded-cavity surface-emitting lasers. The circuit functions as a cascadable optical switch with an on/off ratio of 6, and a maximum optical input/output differential gain of 6. At a bit rate of 100 Mb/s, a record low switching energy of 30 fJ was observed while maintaining circuit gain and cascadability. This switching energy is the lowest reported to date for an optoelectronic smart pixel. >
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