1.3 µm large spot-size laser diodes with laterally tapered active layer

Abstract

1.3 /spl mu/m large spot-size laser diodes (LDs) with a laterally tapered active layer have been fabricated with a conventional buried heterostructure laser process. Fabricated LDs with a cavity length as short as 225 /spl mu/m show singlemode-fibre coupling losses of <3 dB. Threshold currents of 4.7 and 18.0 mA, and efficiencies of 0.54 and 0.37 W/A at 25 and 85/spl deg/C, respectively.