Abstract
We report the device characteristics of stacked InAs∕GaAs quantum-dot lasers cladded by Al0.4Ga0.6As layer grown at a low temperature by metalorganic chemical vapor deposition. A blueshift in emission energy by the effect of postgrowth annealing can be suppressed when the annealing temperature is below 570°C. We achieved the 1.28μm continuous-wave lasing at room temperature of five layer stacked InAs∕GaAs quantum dots embedded in In0.13Ga0.87As strain-reducing layer whose p-cladding layer is grown at 560°C. From the experiments and calculations of the gain spectra of fabricated quantum-dot lasers, the observed lasing originates from the first excited state of stacked InAs quantum dots.
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