Abstract
This paper presents a study of the 1.2kV UMOSFETs with dual shielding regions. Numerical simulations demonstrate the importance of including dual shielding regions to achieve low specific on-resistance and high breakdown voltage. The optimized structure has a low specific on-resistance (Ron,sp) of 2.19 mΩ-cm2, high breakdown voltage of 1470 V, low specific reverse transfer capacitance (Cgd,sp) of 17 pF/cm2 and excellent high-frequency figure-of-merit (HF-FOM) of 37 fs.
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