Abstract
SiC trench Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) has an advantage of a low on-resistance due to a small cell pitch between unit cells, and is widely used for power electronics requiring a high power conversion efficiency. However, there is a electric-field crowding problem at the gate oxide. Since the physical destruction of the gate oxide is irrecoverable, researches of a design that can improve the reliability of the trench MOSFET by suppressing the electric field of the gate oxide are needed. This paper implemented a structure in which p-shielding is added next to a trench and verified its electrical characteristics of 1.2 kV SiC trench MOSFET using Sentaurus TCAD simulation. The result showed that the specific on-resistance of 2.02 mΩ-cm2 was measured and the breakdown voltage was improved from 850 V to 1717 V.
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