Abstract
We have fabricated Super Junction (SJ) V-groove trench MOSFETs (VMOSFETs), demonstrated a low specific on-resistance (RonA) of 0.97 mΩcm2 and a blocking voltage (VB) of 820 V. In the first trial, SJ structure in 4H-SiC have proved to be a good combination with MOS interface on (0-33-8) faces which keep high channel mobility in high doping concentration. We designed a protection structure called “upper p-pillar region” and demonstrated that VB lowering appeared according to its width.
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