02-P-08-Comparison of crystal linear growth rates for silicalite-1 in thermal and microwave syntheses

Abstract

Publisher Summary This chapter discusses the comparison of crystal linear growth rates for silicalite-I in thermal and microwave syntheses. A series of crystal growth experiments has been carried out on reaction mixtures seeded with 43 nm nanocrystals of silicalite-1. For a fixed synthesis composition of 3.1Na 2 O: 60SiO 2 : 6.0TPABr: 5560H 2 O: 240EtOH, product crystal size is controlled in the range 71–98 nm by varying the quantity of seed crystals added to the synthesis batch. In a comparison between conventional and microwave heating at 100°C, no significant difference in nucleation or growth behavior is found between the two methods. Crystal linear growth rates are the same for all experiments and agree well with published values. Under these experimental conditions, the growing crystals experience the same reaction environment, regardless of the heating method.