Abstract
01aB04 MBE法による窒化β-Ga_2O_3基板上への六方晶GaN成長(半導体エピ(1),第36回結晶成長国内会議)
Full Text
Sign-in/Register to access full text options
Published version (Free)
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
More From: Journal of the Japanese Association for Crystal Growth
Paper Title
Journal
Date