Abstract
Lead selenide epitaxial films were grown on silicon substrates using a thin (⩽100 nm) YbS buffer layer. The films were (001)-oriented and had structural, electrical and photoelectrical properties comparable with those of PbSe bulk crystals. The X-ray rocking curve halfwidths were of 100–200 arcsec which are within similar values for PbSe/BaF 2(CaF 2)/Si films, thoroughly investigated for infrared detector array applications. The films investigated exhibit relatively large photosensitivity in the temperature range T = 80–300 K. Minority carrier lifetime values τ ≈ 10 −6s at 80K and their temperature dependencies are preferably determined by the Schockley-Read-Hall recombination mechanism through the deep levels in the band gap.
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