Abstract
We report the performances of a 0.7- $\mu \text{m}$ InP/GaInAs DHBT developed in III-V Lab demonstrating both ${f} _{T}$ and ${f} _{\mathrm{ MAX}}$ of 400 GHz as well as a high fabrication yield and homogeneity on a 3-inch wafer. This technology is used for the fabrication of a very high speed 2:1 multiplexing selector operating up to 212-Gb/s, establishing a speed record. A 5.4-Vpp 100-Gb/s distributed differential selector-driver, as well as a 4.3-Vpp 64-GBd 8-pulse-amplitude-modulation (PAM) (192 Gb/s) high-speed power digital-to-analog converter (DAC) were also realized in this technology.
Highlights
Facing the ever growing data traffic, developing optical communication systems with high transmission capacity is of great interest
It is well known that InP DHBT technology is suitable for such applications thanks to its capability to provide both high cutoff frequencies together with a high breakdown voltage and a high dissipated power
We present III-V Lab’s 0.7-μm InP DHBT technology exhibiting 400-GHz f T and f MAX, as well as a breakdown voltage above 4.5 V and a high dissipated power of 35.2 mW at peak f T
Summary
Facing the ever growing data traffic, developing optical communication systems with high transmission capacity is of great interest. It is well known that InP DHBT technology is suitable for such applications thanks to its capability to provide both high cutoff frequencies together with a high breakdown voltage and a high dissipated power.
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