0.5 V ultra-low power wideband LNA with forward body bias technique

Abstract

An ultra-low power wideband CMOS low noise amplifier (LNA) fabricated in TSMC 0.18 µm RF CMOS process for sub 1 GHz applications is presented. The capacitive cross-coupled LNA with forward-body-bias (FBB) technique is adopted to achieve wideband input impedance matching and low power, low noise factor. The LNA is tested in the frequency range of 400–900 MHz, and exhibits a voltage gain of 18.5–20.7 dB, and a noise figure of 2.95 dB, drawing only 0.385 mW from 0.5 V power supply.