Abstract
A type-II GaAsSb Double Heterojunction Bipolar Transistor (DHBT) with an AlInP emitter, doping-graded GaAsSb base, and InP collector has been grown by molecular beam epitaxy. The 0.38 μm emitter devices have been fabricated by a triple-mesa wet etch process and demonstrated fT/fMAX=470/540 GHz at JC=5.1 mA/μm2 and VCB=0.65 V. This performance is comparable with composition-graded base devices with similar emitter width.
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