0.25 μm fully depleted SOI MOSFETs for RF mixed analog-digital circuits, including a comparison with partially depleted devices with relation to high frequency noise parameters

M Vanmackelberg,C Raynaud,O Faynot,J.-L Pelloie,C Tabone,A Grouillet,F Martin,G Dambrine,L Picheta,E Mackowiak,P Llinares,J Sevenhans,E Compagne,G Fletcher,D Flandre,V Dessard,D Vanhoenacker,J.-P Raskin

doi:10.1016/s0038-1101(01)00120-4

0.25 μm fully depleted SOI MOSFETs for RF mixed analog-digital circuits, including a comparison with partially depleted devices with relation to high frequency noise parameters

M Vanmackelberg, C Raynaud + Show 16 more

https://doi.org/10.1016/s0038-1101(01)00120-4

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Journal: Solid State Electronics	Publication Date: Feb 6, 2002
Citations: 20

Affiliation: Institute of Electronics, Microelectronics and Nanotechnology, Direction de la Recherche Technologique, STMicroelectronics (France), Dolphin Design (France), Université Catholique de Louvain

#Partially Depleted #Fully Depleted + Show 8 more

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Abstract

The purpose of this paper is to completely describe the low and high frequency performance including microwave noise parameters of 0.25 μm fully depleted (FD) silicon-on-insulator (SOI) devices and to compare the noise performance with 0.25 μm partially depleted (PD) devices. These FD devices present a state of the art NF min of 0.8 dB and high G ass of 13 dB at 6 GHz, at V ds =0.75 V , P dc <3 mW at 80 μm total gate width. A extrapolated maximum oscillation frequency of about 70 GHz has been obtained at V ds =1 V and J ds=100 mA/mm.

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