Abstract
The effects of Ti film thickness and rapid thermal annealing (RTA) ambient on the properties of narrow TiSi 2 lines were studied. Decreasing the Ti film thickness improves the critical line width of silicidation. Excessive nitridation suppresses the silicidation at Ti film thickness thinner than 30 nm in atmosphere N 2 RTA. Using a low-pressure N 2 RTA process (30 mTorr), a 0.10 μm line width with low resistivity was accomplished at the Ti film thickness of 20 nm without lateral overgrowth.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
