Abstract
AlSb/InAs HEMTs with a 0.1 /spl mu/m gate length have been fabricated with a thin InAs subchannel separated from the InAs channel by 30 /spl Aring/ of AlSb. As a result, these HEMTs exhibit improved charge control and a higher current-gain cutoff frequency. The devices have a microwave transconductance of 850 mS/mm and an f/sub T/ of 180 GHz at V/sub DS/=0.6 V. After subtracting the gate bonding pad capacitance, an f/sub T/ of 250 GHz was obtained.
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