Abstract
We report on the DC and RF performance of HEMTs based on the Al-free material system InP/InGaAs/InP. These structures were grown by LP-MOCVD using a nitrogen carrier. The influence of gate length and channel composition on the performance of these devices is investigated. We demonstrate that optimum DC and RF performance using highly strained channels can be obtained only if additional composite channels are grown. The cutoff frequencies f/sub T/=160 GHz and f/sub max/=260 GHz for a 0.1-/spl mu/m T-gate device indicate the suitability of our devices for W-band applications.
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