Abstract
An experimental investigation of the structure and phase composition by X-ray, Raman, and ultrasoft X-ray emission spectroscopy, as well as the study of the electrical properties of WxSi(1-x) films used as sensitive elements of superconducting single-photon detectors (SNSPD), depending on the thickness in the range from 7 to 80 nm, was carried out, according to the results of which it was found that the W3Si phase is presumably formed in films 20 and 40 nm thick with a resistivity of 8.4 10-5 and 6.0 10-5 Ω cm, respectively, containing the WSi2, W5Si3, and SiO2 phases, as well as WOx and a small share of β-W. Films with a thickness of 7 nm have the highest resistivity of 18.0 10-5 Ω·cm and contain nanocrystals, WSi2, SiO2, as well as β-W, and an amorphous silicon phase. Films with a thickness of 80 nm (the resistivity is also 18.0 10-5 Ω·cm) predominantly contain WSi2, as well as W5Si3 and SiO2, and, presumably, the W3Si phase.
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