全反射高速陽電子回折法（TRHEPD）による最表面構造解析

Abstract

Total-reflection high-energy positron diffraction (TRHEPD) is a surface-sensitive tool owing to the total reflection of positrons. Since the sign of the crystal potential energy for positrons is positive, opposite to that for electrons, the positron beam at a grazing incidence is totally reflected at a crystal surface. The penetration depth of the positron beam in the total reflection region is estimated to be about a few Å, which corresponds to the thickness of 1-2 atomic layers. Thus, the positron beam in the total reflection region sees only the topmost surface layer of the crystal. Slightly over the critical angle for the total reflection, the positon beam also sees the underlying surface layer. Adjusting the glancing angle of the incident positron beam, the diffraction intensity selectively contains information about the topmost and the underlying surface layers without any effect from the bulk. Therefore, the TRHEPD is very useful for structure determinations of crystal surface and two-dimensional atomic sheet adsorbed on the substrate. In this paper, we will show the surface-sensitivity of the TRHEPD. Shown is also the recent result of silicene, two-dimensional atomic sheet of silicon, using the TRHEPD.