Моделирование туннельного переноса электронов в системе полупроводник-кристаллический диэлектрик-Si(111)

Abstract

AbstractTunneling carrier transport through a thin insulator (e.g., CaF_2) layer between a Si(111) substrate and a semiconductor gate is theoretically investigated. Along with the conservation of a large transverse wave vector of tunneling particles, the limitation imposed on the availability of states in the gate is taken into account. Due to this limitation, the tunneling currents at low insulator bias are weaker than in an analogous structure with a metal gate electrode. The same feature leads to a change in the shape of the energy distribution of tunneling electrons, both in transport between the substrate and gate conduction bands and during the Si(111) conduction band–gate valence band transfer.