미세 Si 입자를 고려한 Al-1%Si 본딩 와이어의 신선공정해석

Abstract

Drawing process of Al-1%Si bonding wire considering fine Si particle is analyzed in this study using FE-simulation. Al-1%Si boding wire requires electric conductivity because Al-1%Si bonding wire is used for interconnection in semiconductor device. About 1% of Si is added to Al wire for dispersion-strengthening. Distribution and shape of fine Si particle have strongly influence on the wire drawing process. In this study, therefore, the finite-element model based on the observation of wire by continuous casting is used to analyze the effect of various parameters, such as the reduction in area, the semi-die angle, the aspect ratio, the inter-particle spacing and orientation angle of the fine Si particle on wire drawing processes. The effect of each parameter on the wire drawing process is investigated from the aspect of ductility and defects of wire. From the results of the analysis, it is possible to obtain the important basic data which can be guaranteed in the fracture prevention of Al-1 %Si wire.