直接接合技術を用いた<i>p</i>-ZnTe/<i>n</i>-ZnOヘテロ接合界面の作製と電気特性評価

Abstract

We fabricated a p-ZnTe/n-ZnO heterojunction structure by a direct bonding technology. The surfaces of the p-ZnTe and n-ZnO substrates were activated by low-energy argon-ion bombardment under high vacuum, with keeping their roughness. Continuously, they brought into contact under controlled pressure at room temperature, and annealed in argon atmosphere as post process. Atomic-scale bonding was confirmed by transmission electron microscopy and scanning energy-dispersive X-ray spectroscopy. It was also confirmed that the electric rectifying characteristics depend on the bonding press time and the post anneal temperature.