Abstract
It is investigated the thermal etching of LiF and MgF2 crystals with cobalt and nickel impurities by means of scanning electron microscopy and atomic force microscopy with using decorating. It is shown that impurity inclusions leave the crystal from dislocations. The differences between of thermal etching in vacuum and air atmosphere take place. The crystallographic oriented terraced etch pits are formed after exit of impurities from dislocations. The square thermal etch pits are formed after thermal etching at 750°C in air. The surface impurity nanoscale film is formed at thermal etching. The oxidation of surface impurities observed at thermal etching in air atmosphere or in residual air atmosphere.
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