Abstract
We studied electrical parameters of Sn/p–Si Schottky barrier diodes (SBDs) by using in situ current–voltage ( I–V) and capacitance–voltage ( C–V) measurements under γ-irradiation at room temperature. The devices were held under zero bias during γ-irradiation with dose rate 0.25 kGy/h, and the total dose range was 0–45 kGy. Irradiation results indicated that these devices may have applications as radiation sensors in order to detect the low-energy γ radiation.
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