Abstract
This work presents the results of studying the optical transmission, photoconductivity, photoluminescence, and X-ray diffraction of HgCdTe solid solution samples with a high (molar fraction 0.7–0.8) CdTe content, grown by molecular beam (MBE) and liquid-phase (LPE) epitaxy. It was shown that the studied material had a significant degree of disordering of the solid solution, which was greater in structures grown by MBE on GaAs substrates than in films grown by LPE. Photoluminescence studies have revealed states in the band gap, which were previously considered not typical of HgCdTe films grown on GaAs substrates, but only of films grown on Si. On the whole, the high quality of the material with a high CdTe content, grown by MBE and used to create the currently widely demanded HgTe / HgCdTe nanostructures, was confirmed.
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