Abstract
The results of studying the optical transmission, photoconductivity, photoluminescence, and X-ray diffraction of HgCdTe solid-solution samples with a high content of CdTe (molar fraction 0.7–0.8), grown by molecular-beam epitaxy (MBE) and liquid-phase epitaxy (LPE), are presented. It is shown that the material under study shows a significant degree of disorder of the solid solution, which is greater in structures grown by MBE on GaAs substrates, compared with the LPE-grown films. A study of the photoluminescence reveals states in the band gap, previously considered untypical of HgCdTe films grown on GaAs substrates, but typical only of films grown on Si. On the whole, the high quality of the material with a high CdTe content, grown by MBE and used to create the HgTe/HgCdTe nanostructures currently in high demand, is confirmed.
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