Abstract
In this thesis, the semiconductor nanometer process, the shallow trench isolation, (STI) improvement of the fine dust produced defects in the thin film deposition process. The fine dust produced in this deposition process defects not readily be effectively detected and can’t perform any remedies, but found dust defects too serious, it can only be scrapped. This case adverse consequences on the of semiconductor nanometer process yield and factory production process, not only a substantial increase in production costs, and will delay the delivery time, seriously affect the competitiveness of customers in the launch of a new generation of products will also destroy themselves goodwill and trust of customers. Shallow trench isolation is critical in the semiconductor nanometer process technology, the traditional PECVD (Plasma Enhanced Chemical Vapor Deposition) unable to meet the capacity needs of high aspect ratio to fill the holes, so you must use HDPCVD (High Density Plasma Chemical Vapor Deposition) to achieve this objective. This thesis is to explore and examine the semiconductor manufacturing process, the shallow trench isolation process of thin film deposition, about dust caused by defective mechanism and its improvement.
Published Version
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