Abstract
We have grown high-quality β-FeSi2 bulk single crystals by a temperature gradient solution growth method using Ga solvent. Polyhedral shaped bulk crystals with clear facet planes were obtained below the growth temperature of 900°C. Laue observation confirmed that crystals are high-quality single crystals without twins. Full-width at half maxim of the X-ray rocking curve at β-FeSi2 (800) reflection was 53 arcsec. The conduction was p-type and the resistivity was 0.03–0.04 Ωcm at room temperature.
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