Abstract
Department of Material Science and Engineering, Pusan National University, Busan 609-735, Korea(Received October 27, 2014 ; revised December 2, 2014 ; accepted December 2, 2014)AbstractIndium tin oxide (ITO) thin films (30 nm) were deposited on PET substrate by reactive DC magnetronsputtering using In/Sn(2, 5 wt.%) metal alloy target without intentionally substrate heating during the depositionunder different DC powers of 70 ~ 110 W. The electrical properties were estimated by Hall-effect measurementssystem. The resistivity of ITO thin film deposited using In/Sn (5 wt.%) metal alloy target at low DC powerincreased with increasing annealing time. However, they increased with increasing annealing time at highDC power. In the case of ITO (Sn 2 wt%), we can't find clear change in resistivity with increasing annealingtime. However, carrier density and mobility showed difference behavior due to change of oxygen vacancy.
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