利用低溫微波退火活化製作奈米級 CMOS TFTs元件的研究

Abstract

In this thesis, a low temperature microwave annealing technique is proposed. One of the major applications of this technique is for the dopant activation of the source/drain region. First of all, influence of the dopant activation process for the ultra thin epi-Ge layer is presented. By using the low-microwave annealing technique, the boron could be activated very well without damaging the pure epi-Ge layer, as compared to those by the conventional high temperature process. The corresponding thermal budget of the innovation annealing technique is much lower than those of conventional rapid thermal annealing and furnace annealing. In addition, the nanoscale fabrication could be easily realized because the punch-through characteristics and short-channel effect could be suppressed by this proposed technique. In addition, we can fabricate nanoscale metal gate TFTs with excellent transfer characteristics, which is better than those by conventional high temperature process. The punch-through characteristics and short-channel effects could be improved and the Ion/Ioff ration could increased to up to 107 at the same time.