Abstract
Abstract Comparative results of computational simulation and experiment are provided, concerning the azimuthal angle dependency of the registered signal second harmonic reflected from CdxHg1–xTe structures and GaAs substrates at the normal incidence of probing laser radiation and azimuthal rotation of its polarization plane. The study of (013) GaAs substrate and buffer layers of CdTe|ZnTe|GaAs has revealed that the deviations from the (013) surface orientation with regard to crystal physics angles ϴ and φ are ~1–3° for GaAs substrates and up to 8° for buffer layers of CdTe|ZnTe|GaAs, while the amplitude of the signal second harmonic reflected from buffer layers can well be considered as inversely related to the full width of X-ray rocking curves at half-maximum. Experimental data show that the values of non-linear susceptibility tensor components for CdxHg1–xTe crystalline structure significantly exceed those for CdTe and GaAs.
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