Abstract
InSb epitaxial layers have been grown on GaAs substrates by metalorganic chemical vapor deposition using trimethylindium and triethyl- or trimethylantimony as sources of In and Sb. Transmission electron microscopy revealed the existence of a large number of misfit dislocations at the substrate-epitaxial layer interface and, in some samples, misoriented grains. The quality of the layers improved with thickness as indicated by transmission electron microscopy, x-ray rocking curve widths, and Hall mobilities. The mobility was correlated with surface roughness, x-ray rocking curve width, and the Sb/In ratio. Hall mobilities up to 60 900 and 27 000 cm2/V s were obtained at 300 and 77 K, respectively, on a 2.9-μm-thick epitaxial InSb layer grown using a two-step growth procedure.
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