Abstract
In this study, we investigate the <TEX>$SiO_2$</TEX> current blocking layer (CBL) to improve light output power efficiency in nonpolar a-plane (11-20) GaN LEDs on a r-plane sapphire substrate. The <TEX>$SiO_2$</TEX> CBL was produced under the p-pad layer using plasma enhanced chemical vapor deposition (PECVD). The results show that nonpolar GaN LED light output power with the <TEX>$SiO_2$</TEX> CBL is considerably enhanced compared without the <TEX>$SiO_2$</TEX> CBL. This can be attributed to reduced light absorption at the p-pad due to current blocking to the active layer by the <TEX>$SiO_2$</TEX> CBL.
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