Abstract
The radiation properties of single-mode lasers based on an AlGaAs/GaAs heterostructure with an ultra-narrow waveguide are studied. It is shown that the use of an ultra-narrow waveguide (100 nm) and thin (70 nm) wide-gap barriers at the waveguide/cladding interface improves the vertical divergence. The lateral and vertical divergences were 5 and 18.5 degrees, respectively, for the developed narrow-stripe (5.1 µm) single-mode lasers. An efficient single-mode operation up to a power of 200 mW is demonstrated. A further increase in current leads to the onset of higher-order modes, while the maximum optical power achieved under continuous-wave (CW) operation is limited by overheating and is 550 mW. The transfer to a pulsed operation (pulse width 200 ns) made it possible to raise the maximum peak optical power to 1500 mW.
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