High-Power Low Vertical Beam Divergence 800-nm-Band Double-Barrier-SCH GaAsP–(AlGa)As Laser Diodes

Abstract

High-power double-barrier separate confinement heterostructure (SCH) GaAsP-AlGaAs-GaAs laser diodes designed for low vertical beam divergence emission at 800-nm band are presented. Insertion of thin wide-gap (low refractive index) barrier layers at the interfaces between the waveguide and cladding layers of an initial SCH causes an optical confinement weakening. As a result, the vertical divergences down to 16deg and 13deg have been obtained, depending on the design version. Similar threshold current densities, higher characteristic temperatures T <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0</sub> compared to the high-power large optical cavity (LOC) lasers of comparable beam divergences and promising high-power performance make this design an alternative to LOC solution