Abstract
One of the greatest challenges for fabricating a Ge channel n-MOSFET is to achieve high n-type dopant activation within the source and drain regions. Currently, p+ doping greater than 1020 cm-3 can be routinely achieved which is close to the theoretical solid solubility limit of B in Ge. However, typical n+ doping of Ge is limited to less than 5×1019 which is far below the solid solubility limit of P in Ge. This work is aimed at achieving n+ doping of greater than 1020 cm-3 in Ge. In this paper, we describe a Sb and P co-implantation process to enhance n+ activation in Ge. N-carrier concentration more than 1.0×1020/cm3 has been demonstrated by this method. Furthermore, higher forward bias current in Ge n+/p junction diode is obtained from n+ formation by Sb and P co-implantion, as a consequence of the high n-type dopant activation in Ge.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
