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Abstract
In this paper, we present a detailed study of temperature-based ion implantation of phosphorus dopants in Ge for varying dose and anneal conditions through fabricated n+/p junctions and n-type MOSFETs (nMOSFETs). In comparison with room temperature (RT) (25 °C) and hot (400 °C) implantation, cryogenic (−100 °C) implantation with a dose of 2.2e15 $\mathrm{cm}^{-2}$ followed by a (400 °C) rapid thermal annealing leads to 1) lower junction leakage with higher activation energy and 2) lower sheet resistance with higher dopant activation and shallower junction depth. Gate-last Ge nMOSFETs fabricated using cryogenic implanted n+/p source/drain junction (2.2e15 $\mathrm{cm}^{-2}$ ) exhibit lower off-current (upto $5\times )$ and higher ON-current compared with RT (25 °C) and hot (400 °C) implanted nMOSFETs. This paper demonstrates that cryogenic implantation (−100 °C) can enable high-performance Ge nMOSFETs by alleviating the problems of lower activation and high diffusion of phosphorus in Ge.
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