Abstract
새로운 전광(all-optical) NOR논리소자가 반도체 광증폭기 (SOA)의 이득포화 특성을 이용하여 처음으로 제안되고 입증되었다. 전광 NOR논리소자는 이득의 비선형성에 의해 동작되므로 SOA의 이득포화를 충분히 얻기 위해 펌프신호는 SOA의 입력단에서 어븀 첨가 광섬유 증폭기에 의해 증폭되었다. 전광 NOR 논리소자의 동작특성은 10 Gbit/s에서 성공적으로 측정되었다. A novel all-optical NOR gate is proposed and demonstrated for the first time by use of gain saturation in a semiconductor optical amplifier (SOA). It is operated by the nonlinearity of the SOA gain. Hence, to obtain sufficient gain saturation of the SOA, pump signals are amplified by an Er-doped fiber amplifier at the input of the SOA. The operation characteristics of the all-optical NOR gate are successfully measured at 10 Gbit/s.
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