Abstract

Based on the experimental data on high-temperature X-ray diffraction and high resolution transmission electron microscopy of silver sulfide, the orientation relationships between the low-temperature monoclinic semiconductor acantite alfa-Ag2S and the high-temperature body-centered argentite beta-Ag2S are determined. It is found that, in contrast to acanthite, the possible distances between silver atoms in a cubic argentite are too small for the positions of the metal sublattice to be occupied by Ag atoms with a probability of 1. It is shown that the acanthite (010) and (001) atomic planes are parallel to the planes ( 1-10) and (221) of argentite, respectively. The orientational relationships found between acanthite and argentite are important for understanding the physical action of the Ag2S/Ag heteronanostructure, considered as a potential basis for creating resistive switches and nonvolatile memory devices.

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