Изучение влияния энергии ионов неона на шероховатость поверхности основных срезов монокристаллического кремния при ионном травлении

Abstract

The paper presents the results of studying the energy dependences of the sputtering coefficient and the effective surface roughness of single-crystal silicon irradiated with neon ions with an energy of 100-1000 eV. As a result of the work, the parameters of ion-beam etching with accelerated Ne ions were determined, providing a high sputtering coefficient (etching rate) and an effective roughness value in the spatial frequency range 4.9∙10-2-6.3∙101 μm-1 less than 0.3 nm for the main cuts of single-crystal silicon (<1 0 0>, <1 1 0> and <1 1 1>).