Abstract

Due to its electronic conductivity and transparency, Indium Tin Oxide (ITO) is an irreplaceable material for today's technology, such as various flat panel displays. The resultant increase of the demand for indium is a major concern, but can be solved by understanding the detail of electronic conduction in ITO. For this purpose, we are working on a computational physics research on ITO: a model analysis of thin film with reduced amount of indium as a percolation model. Because ITO is typically formed into thin film electrodes in its applications, we are currently focused on 2D percolation models.

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