正・負超磁歪薄膜で構成される高感度複合運動機能素子

Abstract

Composite mover device constructed with both negative and positive magnetostrictive thin films on each side surface of silicon substrate were prepared by DC magnetron sputtering process. The magnetic field induced mover strain (an apparent magnetostriction) of composite mover device at 150 kA/m of magnetic field was as same as the sum of magnetostriction values of Sm-Fe negative and Tb-Fe positive magnetostrictive thin films. Although the magnetostrictive susceptibility of Sm-Fe negative and Tb-Fe positive magnetostrictive thin films were over 8.6 and 5.42 ppm/kA•m-1, respectively, an apparent magnetostrictive susceptibility of the composite mover device was 36.4 ppm/kA•m-1. We concluded that composite process tremendously enhanced the apparent magnetostrictive susceptibility. Composite mover device with high responsiveness was developed.