Abstract
The work shows specific examples of the possibilities and limitations of the contact profilometry method for measuring the relief of micro and nanostructures formed on substrates during the production of microelectronic devices. The requirements to the relief parameters of microelectronic structures are formulated, which make it possible to use contact profilometers for their measurement and control. Methods of forming steps for measuring the thickness of films by contact profilometry are described, and their advantages and disadvantages are analyzed. The method of contact profilometry with optical profilometry and atomic force microscopy is compared.
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