Abstract
A semiconductive fine powder was prepared by mechano-chemical reaction with dry ball-milling of a powder mixture of SnO2 and Sb2O3. From the microstructural point of view, discussions were made on the effects of the following factors of (A) and (B) on the electrical conductivity of glass composites containing the ball-milled semiconductive powder; i.e., (A) ball-milling duration, and (B) firing temperature of powder compact.The results obtained were summarized as follows:(1) The electrical conductivity of the ball-milled powder mixture significantly increased with increasing ball-milling time. However, it was pointed out that the reaggregation of finer particles during milling induced a detrimental state to the homogenization of particle dispersion which determines the electrical conduction structure in the glass matrix.(2) It was found that firing at higher temperature was effective to increase the homogeneous dispersion of semiconductive SnO2 particles in the glass matrix, resulting in an increase in electrical conductivity of the glass composite.
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