Abstract
The present paper deals with a ductile mode ultraprecision grinding equipment, which is developed for industrially realizing crack free grinding of semiconductor materials with high shape accuracy. This equipment is composed of ultraprecision systems such as force-operated linear actuator, composite bearing guideway mechanism, stationary spindle structure, 10 nm resolution feedback NC control and so on. By these systems, inching resolution of the grinding wheel head reached 10 nm, and the loop stiffness between grinding axis and rotary-table is 150 N/μm. The thickness of dislocation layer remained on the ground silicon wafer is about 0.5 μm. It is confirmed that there are no cracks remaining under the ground surface from SAM (Scanning Acoustic Microscope) observations. On the other hand, in case of conventional precision grinding machine, many cracks were observed along grinding marks. The LTV (Local Thickness Variation) which describes local flatness for all cells is under 0.4 μm. The TTV (Total Thickness Variation) which describes global flatness is 0.55 μm.
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