Abstract
AbstractThin Zr-stabilized SnO_2 films are fabricated by ion-beam reactive sputtering. The amorphous thin-film SnO_2 samples with various Zr concentrations are synthesized in a single production process. The influence of heat treatment on the structure and electrical properties of the synthesized films is studied. The onset of crystallization in thin-film Sn–Zr–O systems is observed at 673 and 773 K, which is accompanied by the appearance of metastable phases. Being heated to 873 K, these phases are transformed into Sn + Sn_2O_3. It is found that the electrotransfer the film crystallization at temperatures close to room temperature is thermally activated with an activation energy of ~0.78 eV. Tin-oxide films doped with Zr from 0.6 to 3.9 at % manifest the property of hydrogen-gas sensitivity after crystallization.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
