Ｓｉ単結晶のメカノケミカルポリシングにおける加工速度促進機構 メカノケミカルポリシングの研究 ＩＩ

Abstract

Mechano-chemical polishing characteristics of Si single crystals are studied by changing the tem-perature of polisher surface and reagent, and “apparent” activation energies of Si in polishing are obtained from Arrhenius plots of polishing rate. It is confirmed that the activation energy of work surface is apparently reduced. Mutual relation be-tween the reduction share considered as thermal energy E and frictional calorific value Q obtained from polishing forces are investigated. Results ob-tained are as follows : (1) Mechano-chemical polish-ing rate increases exponentially as the polisher surface temperature increases. Arrhenius plots of the polishing rate at each temperature agree well with the linear law. The thermal energy E increases as polishing pressure or abrasives concentration increases. (2) The functional relation between frictional calorific value Q (kcal/h) and thermal energy E (kcal/h), is expressed approximately as E=αQ-β (α, β; constant, E≥0). α in mechano-chemical polish-ing (=1/13-1/21) is 1 figure larger than that in disc type chemical polishing (=1/300) without abrasives. In each polishing condition, E is equal to zero when Q is less than 750 × 10-4 (kcal/h). (3) Increase in polishing surface temperature, that facilitates chemical reaction with a polishing reagent in mechano-chemical polishing, is due to frictional heat. The friction effect between work and abrasives on the polishing rate increase is larger than that between work and polisher.