Abstract
The Thin Wafer method for determining the dynamic stress-strain relation of materials has been examined on the basis of wave propagation in a specimen. The analysis was done for an elastic-plastic rate independent material and rate dependent elastic-viscoplastic or elastic-viscoplastic-plastic materials.Stress history at both ends of the specimen was taken as a measure of uniformity in the deformation of the specimen. The stress-strain curves obtained from the conventional Thin Wafer method were compared with those calculated from the average strain rate by the constitutive equations.It is concluded that the Thin Wafer method is a valid means for obtaining the stress-strain relation of materials at high strain rates.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of the Society of Materials Science, Japan
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
