Abstract
AbstractThe behavior of excitons in heterostructures with indirect-gap GaAs/AlAs quantum wells and (In, Al)As/AlAs quantum dots is discussed. The possibilities of controlled change of the exciton radiative recombination time in the range from dozens of nanoseconds to dozens of microseconds, experimental study of the spin dynamics of long-lived localized excitons, and use of the optical resonant methods for exciting the indirect-band exciton states are demonstrated.
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