Abstract
Zinc tin oxide transparent thin film transistors (ZTO TTFTs) were fabricated on oxidized Si wafers. The thickness of ~30 nm films were deposited on the oxidized Si wafers by atomic layer deposition, which acted as the gate insulators of ZTO TTFTs. The films were rapid-annealed at , , , and , respectively. Active layers of ZTO films were deposited on the coated Si wafers by rf magnetron sputtering. Mobility and threshold voltage were measured as a function of the rapid-annealing temperature. X-ray photoelectron spectroscopy (XPS) were carried out to observe the chemical bindings of films. The annealing effects of gate-insulator on the properties of TTFTs were analyzed based on the results of XPS.
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