Abstract
In this paper, Plasma Enhanced Chemical Vapor Deposition (PECVD) SiO2 film properties are modeled using statistical analysis and neural networks. For systemic analysis, Box-Behnken's 3 factor design of experiments (DOE) with response surface method are used. For characterization, deposited film thickness and film stress are considered as film properties and three process input factors including plasma RF power, flow rate of N2O gas, and flow rate of 5% SiH4 gas contained at N2 gas are considered for modeling. For film thickness characterization, regression based model showed only 0.71% of root mean squared (RMS) error. Also, for film stress model case, both regression model and neural prediction model showed acceptable RMS error. For sensitivity analysis, compare to conventional fixed mid point based analysis, proposed sensitivity analysis for entire range of interest support more process information to optimize process recipes to satisfy specific film characteristic requirements.
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